Granted Patent
Utility
US 5,407,853 · App. 08/179,960
Method of making semiconductor integrated circuit device having single-element type non-volatile memory elements
Inventors:
Kazuhiro Komori, Toshiaki Nishimoto, Satoshi Meguro, Hitoshi Kume, Yoshiaki Kamigaki
Patented Case
View Patent ↗
Granted: Apr 18, 1995
Filed: Jan 11, 1994
Inventors
Kazuhiro Komori
Toshiaki Nishimoto
Satoshi Meguro
Hitoshi Kume
Yoshiaki Kamigaki
Assignee (at issue)
HITACHI, LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.