Granted Patent
Utility
US 5,407,870 · App. 08/071,885
Process for fabricating a semiconductor device having a high reliability dielectric material
Inventors:
Yoshio Okada, Philip J. Tobin
Patented Case
View Patent ↗
Granted: Apr 18, 1995
Filed: Jun 7, 1993
Inventors
Yoshio Okada
Philip J. Tobin
Assignee (at issue)
Motorola, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.