Granted Patent
Utility
US 5,412,239 · App. 08/062,507
Contact geometry for improved lateral MOSFET
Inventor:
Richard K. Williams
Patented Case
View Patent ↗
Granted: May 2, 1995
Filed: May 14, 1993
Inventor
Richard K. Williams
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.