IP Library Granted Patent US 5,416,341
Granted Patent Utility
US 5,416,341 · App. 08/187,471

Substrate for a semiconductor device and method for manufacturing a semiconductor device from the substrate

Inventor: Hiroshi Hayama
Patented Case View Patent ↗
Granted: May 16, 1995 Filed: Jan 28, 1994
Inventor
Hiroshi Hayama
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,416,341
App. No.
08/187,471
Filed
1994-01-28
Granted
1995-05-16
Kind
A