Granted Patent
Utility
US 5,438,007 · App. 08/127,767
Method of fabricating field effect transistor having polycrystalline silicon gate junction
Inventors:
Albert W. Vinal, Michael W. Dennen
Patented Case
View Patent ↗
Granted: Aug 1, 1995
Filed: Sep 28, 1993
Inventors
Albert W. Vinal
Michael W. Dennen
Assignee (at issue)
Thunderbird Technologies, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.