Granted Patent
Utility
US 5,445,974 · App. 08/120,147
Method of fabricating a high-voltage, vertical-trench semiconductor device
Inventor:
David Whitney
Patented Case
View Patent ↗
Granted: Aug 29, 1995
Filed: Sep 10, 1993
Inventor
David Whitney
Assignee (at issue)
Siemens Components, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.