IP Library Granted Patent US 5,455,429
Granted Patent Utility
US 5,455,429 · App. 08/174,912

Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material

Inventors: Thomas L. Paoli, John E. Northrup
Patented Case View Patent ↗
Granted: Oct 3, 1995 Filed: Dec 29, 1993
Inventors
Thomas L. Paoli
John E. Northrup
Assignee (at issue)
Xerox Corporation

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Quick Facts
Patent No.
US 5,455,429
App. No.
08/174,912
Filed
1993-12-29
Granted
1995-10-03
Kind
A