Granted Patent
Utility
US 5,464,792 · App. 08/186,957
Process to incorporate nitrogen at an interface of a dielectric layer in a semiconductor device
Inventors:
Hsing-Huang Tseng, Philip J. Tobin
Patented Case
View Patent ↗
Granted: Nov 7, 1995
Filed: Jan 27, 1994
Inventors
Hsing-Huang Tseng
Philip J. Tobin
Assignee (at issue)
Motorola, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.