Granted Patent
Utility
US 5,464,795 · App. 08/203,559
Method of forming polycrystalline silicon thin films for semiconductor devices
Inventor:
Shizuo Oguro
Patented Case
View Patent ↗
Granted: Nov 7, 1995
Filed: Mar 1, 1994
Inventor
Shizuo Oguro
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.