IP Library Granted Patent US 5,466,639
Granted Patent Utility
US 5,466,639 · App. 08/319,217

Double mask process for forming trenches and contacts during the formation of a semiconductor memory device

Inventor: Philip J. Ireland
Patented Case View Patent ↗
Granted: Nov 14, 1995 Filed: Oct 6, 1994
Inventor
Philip J. Ireland
Assignee (at issue)
Micron Semiconductor, Inc.

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Quick Facts
Patent No.
US 5,466,639
App. No.
08/319,217
Filed
1994-10-06
Granted
1995-11-14
Kind
A