Granted Patent
Utility
US 5,468,979 · App. 08/294,787
Semiconductor device having trench type capacitors formed completely within an insulating layer
Inventors:
Tomofune Tani, Ichiro Murai, Kenji Anzai
Patented Case
View Patent ↗
Granted: Nov 21, 1995
Filed: Aug 23, 1994
Inventors
Tomofune Tani
Ichiro Murai
Kenji Anzai
Assignee (at issue)
NIPPON STEEL CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.