Granted Patent
Utility
US 5,468,982 · App. 08/253,527
Trenched DMOS transistor with channel block at cell trench corners
Inventors:
Fwu-Iuan Hshieh, Sze-Hon Kwan, Mike F. Chang, Yueh-Se Ho, Jan Van Der Linde, King Owyang
Patented Case
View Patent ↗
Granted: Nov 21, 1995
Filed: Jun 3, 1994
Inventors
Fwu-Iuan Hshieh
Sze-Hon Kwan
Mike F. Chang
Yueh-Se Ho
Jan Van Der Linde
King Owyang
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.