Granted Patent
Utility
US 5,478,776 · App. 08/174,595
Process for fabricating integrated circuit containing shallow junction using dopant source containing organic polymer or ammonium silicate
Inventors:
Henry S. Luftman, Roderick K. Watts
Patented Case
View Patent ↗
Granted: Dec 26, 1995
Filed: Dec 27, 1993
Inventors
Henry S. Luftman
Roderick K. Watts
Assignee (at issue)
AT&T CORP.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.