Granted Patent
Utility
US 5,491,104 · App. 08/315,555
Method for fabricating DRAM cells having fin-type stacked storage capacitors
Inventors:
William W. Lee, Meng-Jaw Cherng, Ing-Ruey Liaw
Patented Case
View Patent ↗
Granted: Feb 13, 1996
Filed: Sep 30, 1994
Inventors
William W. Lee
Meng-Jaw Cherng
Ing-Ruey Liaw
Assignee (at issue)
Industrial Technology Research Institute
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.