Granted Patent
Utility
US 5,494,836 · App. 08/460,259
Process of producing heterojunction bipolar transistor with silicon-germanium base
Inventor:
Kiyotaka Imai
Patented Case
View Patent ↗
Granted: Feb 27, 1996
Filed: Jun 2, 1995
Inventor
Kiyotaka Imai
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.