IP Library › Granted Patent US 5,498,568
Granted Patent Utility
US 5,498,568 · App. 08/456,870

Method of producing a compound semiconductor crystal layer with a steep heterointerface

Inventors: Hiroyuki Hosoba, Junichi Nakamura, Masanori Watanabe
Patented Case View Patent ↗
Granted: Mar 12, 1996 Filed: Jun 1, 1995
Inventors
Hiroyuki Hosoba
Junichi Nakamura
Masanori Watanabe
Assignee (at issue)
SHARP KABUSHIKI KAISHA

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Quick Facts
Patent No.
US 5,498,568
App. No.
08/456,870
Filed
1995-06-01
Granted
1996-03-12
Kind
A