Granted Patent
Utility
US 5,498,574 · App. 08/427,216
Process of fabricating semiconductor device having flattening stage for inter-level insulating layer without deterioration of device characteristics
Inventor:
Shuuzou Sasaki
Patented Case
View Patent ↗
Granted: Mar 12, 1996
Filed: Apr 24, 1995
Inventor
Shuuzou Sasaki
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.