IP Library Granted Patent US 5,501,173
Granted Patent Utility
US 5,501,173 · App. 08/138,564

Method for epitaxially growing .alpha.-silicon carbide on a-axis .alpha.-silicon carbide substrates

Inventors: Albert Augustus Burk, Jr., Donovan L. Barrett, Hudson M. Hobgood, Rowland C. Clarke, Graeme W. Eldridge, Charles D. Brandt
Patented Case View Patent ↗
Granted: Mar 26, 1996 Filed: Oct 18, 1993
Inventors
Albert Augustus Burk, Jr.
Donovan L. Barrett
Hudson M. Hobgood
Rowland C. Clarke
Graeme W. Eldridge
Charles D. Brandt
Assignee (at issue)
Westinghouse Electric Company LLC

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Quick Facts
Patent No.
US 5,501,173
App. No.
08/138,564
Filed
1993-10-18
Granted
1996-03-26
Kind
A