Granted Patent
Utility
US 5,502,007 · App. 08/283,295
Method of forming flat surface of insulator film of semiconductor device
Inventor:
Hiroshi Murase
Patented Case
View Patent ↗
Granted: Mar 26, 1996
Filed: Jul 28, 1994
Inventor
Hiroshi Murase
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.