Granted Patent
Utility
US 5,508,207 · App. 08/199,170
Method of annealing a semiconductor wafer in a hydrogen atmosphere to desorb surface contaminants
Inventors:
Masataka Horai, Naoshi Adachi, Hideshi Nishikawa, Masakazu Sano
Patented Case
View Patent ↗
Granted: Apr 16, 1996
Filed: Apr 26, 1994
Inventors
Masataka Horai
Naoshi Adachi
Hideshi Nishikawa
Masakazu Sano
Assignee (at issue)
Sumitomo Sitix Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.