IP Library › Granted Patent US 5,516,625
Granted Patent Utility
US 5,516,625 · App. 08/118,063

Fill and etchback process using dual photoresist sacrificial layer and two-step etching process for planarizing oxide-filled shallow trench structure

Inventors: Jeanne M. McNamara, Deborah K. Rodriguez, David H. Leebrick
Patented Case View Patent ↗
Granted: May 14, 1996 Filed: Sep 8, 1993
Inventors
Jeanne M. McNamara
Deborah K. Rodriguez
David H. Leebrick
Assignee (at issue)
HARRIS CORPORATION

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Quick Facts
Patent No.
US 5,516,625
App. No.
08/118,063
Filed
1993-09-08
Granted
1996-05-14
Kind
A