Granted Patent
Utility
US 5,517,039 · App. 08/339,034
Semiconductor devices fabricated with passivated high aluminum-content III-V material
Inventors:
Nick Holonyak, Jr., Tim A. Richard, Mark R. Keever, Fred A. Kish, Jr., Chun Lei, Serge L. Rudaz
Patented Case
View Patent ↗
Granted: May 14, 1996
Filed: Nov 14, 1994
Inventors
Nick Holonyak, Jr.
Tim A. Richard
Mark R. Keever
Fred A. Kish, Jr.
Chun Lei
Serge L. Rudaz
Assignee (at issue)
Hewlett-Packard Company, L.P.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.