Granted Patent
Utility
US 5,523,587 · App. 08/082,194
Method for low temperature growth of epitaxial silicon and devices produced thereby
Inventor:
Jueinai Kwo
Patented Case
View Patent ↗
Granted: Jun 4, 1996
Filed: Jun 24, 1993
Inventor
Jueinai Kwo
Assignee (at issue)
AT&T CORP.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.