Granted Patent
Utility
US 5,523,601 · App. 08/353,080
High-breakdown-voltage MOS transistor
Inventor:
Hiroshi Yanagigawa
Patented Case
View Patent ↗
Granted: Jun 4, 1996
Filed: Dec 9, 1994
Inventor
Hiroshi Yanagigawa
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.