IP Library › Granted Patent US 5,525,540
Granted Patent Utility
US 5,525,540 · App. 08/355,213

Method for manufacturing silicon layer having impurity diffusion preventing layer

Inventors: Masanobu Zenke, Fumiki Aisou
Patented Case View Patent ↗
Granted: Jun 11, 1996 Filed: Dec 9, 1994
Inventors
Masanobu Zenke
Fumiki Aisou
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,525,540
App. No.
08/355,213
Filed
1994-12-09
Granted
1996-06-11
Kind
A