Granted Patent
Utility
US 5,529,940 · App. 08/318,082
Method of manufacturing a vertical MOSFET having a gate electrode of polycrystalline silicon
Inventors:
Masanori Yamamoto, Masami Sawada
Patented Case
View Patent ↗
Granted: Jun 25, 1996
Filed: Oct 5, 1994
Inventors
Masanori Yamamoto
Masami Sawada
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.