IP Library Granted Patent US 5,543,357
Granted Patent Utility
US 5,543,357 · App. 08/351,679

Process of manufacturing a semiconductor device by filling a via hole in an interlayered film of the device with wiring metal

Inventors: Yoshiaki Yamada, Nobukazu Ito, Kuniko Miyakawa, Michiko Yamanaka
Patented Case View Patent ↗
Granted: Aug 6, 1996 Filed: Dec 8, 1994
Inventors
Yoshiaki Yamada
Nobukazu Ito
Kuniko Miyakawa
Michiko Yamanaka
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,543,357
App. No.
08/351,679
Filed
1994-12-08
Granted
1996-08-06
Kind
A