Granted Patent
Utility
US 5,543,359 · App. 08/361,532
Method of forming a titanium silicide film involved in a semiconductor device
Inventor:
Tadahiko Horiuchi
Patented Case
View Patent ↗
Granted: Aug 6, 1996
Filed: Dec 22, 1994
Inventor
Tadahiko Horiuchi
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.