Granted Patent
Utility
US 5,546,339 · App. 08/439,458
Nonvolatile semiconductor memory device equipped with means for suppressing drain disturbance phenomenon
Inventor:
Ken-Ichi Oyama
Patented Case
View Patent ↗
Granted: Aug 13, 1996
Filed: May 11, 1995
Inventor
Ken-Ichi Oyama
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.