Granted Patent
Utility
US 5,547,880 · App. 08/464,978
Method for forming a zener diode region and an isolation region
Inventors:
Richard K. Williams, Hamza Yilmaz, Michael E. Cornell, Jun-Wei Chen
Patented Case
View Patent ↗
Granted: Aug 20, 1996
Filed: Jun 5, 1995
Inventors
Richard K. Williams
Hamza Yilmaz
Michael E. Cornell
Jun-Wei Chen
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.