Granted Patent
Utility
US 5,550,397 · App. 08/299,855
Metal oxide semiconductor transistors having a polysilicon gate electrode with nonuniform doping in source-drain direction
Inventors:
Nadia Lifshitz, Serge Luryi
Patented Case
View Patent ↗
Granted: Aug 27, 1996
Filed: Sep 1, 1994
Inventors
Nadia Lifshitz
Serge Luryi
Assignee (at issue)
LUCENT TECHNOLOGIES INC.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.