Granted Patent
Utility
US 5,553,018 · App. 08/484,580
Nonvolatile memory cell formed using self aligned source implant
Inventors:
Hsingya Arthur Wang, James Hsu
Patented Case
View Patent ↗
Granted: Sep 3, 1996
Filed: Jun 7, 1995
Inventors
Hsingya Arthur Wang
James Hsu
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.