Granted Patent
Utility
US 5,567,639 · App. 08/582,707
Method of forming a stack capacitor of fin structure for DRAM cell
Inventor:
Su-Jaw Chang
Patented Case
View Patent ↗
Granted: Oct 22, 1996
Filed: Jan 4, 1996
Inventor
Su-Jaw Chang
Assignee (at issue)
Utron Technology Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.