Granted Patent
Utility
US 5,567,978 · App. 08/383,261
High voltage, junction isolation semiconductor device having dual conductivity tape buried regions and its process of manufacture
Inventor:
Lawrence G. Pearce
Patented Case
View Patent ↗
Granted: Oct 22, 1996
Filed: Feb 3, 1995
Inventor
Lawrence G. Pearce
Assignee (at issue)
HARRIS CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.