Granted Patent
Utility
US 5,571,745 · App. 08/510,103
Fabrication method of semiconductor device containing n- and p-channel MOSFETs
Inventor:
Tadahiko Horiuchi
Patented Case
View Patent ↗
Granted: Nov 5, 1996
Filed: Aug 1, 1995
Inventor
Tadahiko Horiuchi
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.