Granted Patent
Utility
US 5,580,419 · App. 08/217,539
Process of making semiconductor device using focused ion beam for resistless in situ etching, deposition, and nucleation
Inventor:
John J. Berenz
Patented Case
View Patent ↗
Granted: Dec 3, 1996
Filed: Mar 23, 1994
Inventor
John J. Berenz
Assignee (at issue)
TRW Limited
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.