IP Library Granted Patent US 5,580,419
Granted Patent Utility
US 5,580,419 · App. 08/217,539

Process of making semiconductor device using focused ion beam for resistless in situ etching, deposition, and nucleation

Inventor: John J. Berenz
Patented Case View Patent ↗
Granted: Dec 3, 1996 Filed: Mar 23, 1994
Inventor
John J. Berenz
Assignee (at issue)
TRW Limited

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Quick Facts
Patent No.
US 5,580,419
App. No.
08/217,539
Filed
1994-03-23
Granted
1996-12-03
Kind
A