IP Library Granted Patent US 5,583,348
Granted Patent Utility
US 5,583,348 · App. 07/801,249

Method for making a schottky diode that is compatible with high performance transistor structures

Inventor: Lalgudi M. G. Sundaram
Patented Case View Patent ↗
Granted: Dec 10, 1996 Filed: Dec 3, 1991
Inventor
Lalgudi M. G. Sundaram
Assignee (at issue)
Motorola, Inc.

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Quick Facts
Patent No.
US 5,583,348
App. No.
07/801,249
Filed
1991-12-03
Granted
1996-12-10
Kind
A