IP Library Granted Patent US 5,585,285
Granted Patent Utility
US 5,585,285 · App. 08/568,356

Method of forming dynamic random access memory circuitry using SOI and isolation trenches

Inventor: Sanh D. Tang
Patented Case View Patent ↗
Granted: Dec 17, 1996 Filed: Dec 6, 1995
Inventor
Sanh D. Tang
Assignee (at issue)
Micron Technology, Inc.

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Quick Facts
Patent No.
US 5,585,285
App. No.
08/568,356
Filed
1995-12-06
Granted
1996-12-17
Kind
A