Granted Patent
Utility
US 5,587,326 · App. 07/965,027
Method of forming bipolar junction transistor of epitaxial planar type
Inventor:
Hisashi Takemura
Patented Case
View Patent ↗
Granted: Dec 24, 1996
Filed: Oct 23, 1992
Inventor
Hisashi Takemura
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.