Granted Patent
Utility
US 5,587,329 · App. 08/295,374
Method for fabricating a switching transistor having a capacitive network proximate a drift region
Inventors:
Fu-Lung Hseuh, Alfred C. Ipri, Gary M. Dolny, Roger G. Stewart
Patented Case
View Patent ↗
Granted: Dec 24, 1996
Filed: Aug 24, 1994
Inventors
Fu-Lung Hseuh
Alfred C. Ipri
Gary M. Dolny
Roger G. Stewart
Assignee (at issue)
David Sarnoff Research Center Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.