Granted Patent
Utility
US 5,593,741 · App. 08/495,873
Method and apparatus for forming silicon oxide film by chemical vapor deposition
Inventor:
Yasuo Ikeda
Patented Case
View Patent ↗
Granted: Jan 14, 1997
Filed: Jun 28, 1995
Inventor
Yasuo Ikeda
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.