Granted Patent
Utility
US 5,593,909 · App. 08/467,715
Method for fabricating a MOS transistor having an offset resistance
Inventors:
Min-Koo Han, Byung-Hyuk Min
Patented Case
View Patent ↗
Granted: Jan 14, 1997
Filed: Jun 6, 1995
Inventors
Min-Koo Han
Byung-Hyuk Min
Assignee (at issue)
SAMSUNG DISPLAY CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.