Selectively Si-doped InAs/A1AsSb short-period-superlattices as N-type cladding layers for mid-IR laser structures grown on InAs substrates

Granted: Jan 14, 1997 Filed: Jun 6, 1995

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.