Granted Patent
Utility
US 5,597,765 · App. 08/423,588
Method for making termination structure for power MOSFET
Inventors:
Hamza Yilmaz, Fwu-Iuan Hshieh
Patented Case
View Patent ↗
Granted: Jan 28, 1997
Filed: Apr 17, 1995
Inventors
Hamza Yilmaz
Fwu-Iuan Hshieh
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.