Granted Patent
Utility
US 5,599,733 · App. 08/342,530
Method using cadmium-rich CdTe for lowering the metal vacancy concentrations of HgCdTe surfaces
Inventors:
Chang-Feng Wan, John H. Tregilgas
Patented Case
View Patent ↗
Granted: Feb 4, 1997
Filed: Nov 21, 1994
Inventors
Chang-Feng Wan
John H. Tregilgas
Assignee (at issue)
Texas Instruments Incorporated
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.