IP Library Granted Patent US 5,603,763
Granted Patent Utility
US 5,603,763 · App. 08/535,098

Method for growing single crystal

Inventors: Yoshiteru Taniguchi, Toshiaki Asahi
Patented Case View Patent ↗
Granted: Feb 18, 1997 Filed: Oct 18, 1995
Inventors
Yoshiteru Taniguchi
Toshiaki Asahi
Assignee (at issue)
Japan Energy Corporation

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Quick Facts
Patent No.
US 5,603,763
App. No.
08/535,098
Filed
1995-10-18
Granted
1997-02-18
Kind
A