Granted Patent
Utility
US 5,603,765 · App. 08/507,744
Method of growing high breakdown voltage allnas layers in InP devices by low temperature molecular beam epitaxy
Inventors:
Mehran Matloubian, Linda M. Jelloian, Mark Lui, Takyiu Liu
Patented Case
View Patent ↗
Granted: Feb 18, 1997
Filed: Apr 21, 1995
Inventors
Mehran Matloubian
Linda M. Jelloian
Mark Lui
Takyiu Liu
Assignee (at issue)
Hughes Aircraft Company
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.