IP Library Granted Patent US 5,604,149
Granted Patent Utility
US 5,604,149 · App. 08/403,142

Method of and device for isolating active areas of a semiconducor substrate by quasi-plane shallow trenches

Inventors: Maryse Paoli, Pierre Brouquet, Michel Haond
Patented Case View Patent ↗
Granted: Feb 18, 1997 Filed: Mar 13, 1995
Inventors
Maryse Paoli
Pierre Brouquet
Michel Haond
Assignee (at issue)
FRANCE TELECOM

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Quick Facts
Patent No.
US 5,604,149
App. No.
08/403,142
Filed
1995-03-13
Granted
1997-02-18
Kind
A