Granted Patent
Utility
US 5,605,852 · App. 08/444,336
Method for fabricating high voltage transistor having trenched termination
Inventor:
Izak Bencuya
Patented Case
View Patent ↗
Granted: Feb 25, 1997
Filed: May 18, 1995
Inventor
Izak Bencuya
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.