Granted Patent
Utility
US 5,610,086 · App. 08/468,584
Method of making an AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications
Inventors:
Takyiu Liu, Chanh Nguyen, Mehran Matloubian
Patented Case
View Patent ↗
Granted: Mar 11, 1997
Filed: Jun 6, 1995
Inventors
Takyiu Liu
Chanh Nguyen
Mehran Matloubian
Assignee (at issue)
Hughes Aircraft Company
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.